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HAF2027(L), HAF2027(S)
Silicon N Channel Power MOS FET Power Switching
REJ03G1674-0100 Rev.1.00 May 19, 2008
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
* * * * Logic level operation (4 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1 1 2 3
2
1. Gate 2. Drain (Flange) 3. Source
3
HAF2027(L)
HAF2027(S)
D
G
Gate Resistor
Temperature Sensing Circuit
Latch Circuit
Gate Shut-down Circuit
S
REJ03G1674-0100 Page 1 of 8
Rev.1.00
May 19, 2008
HAF2027(L), HAF2027(S)
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Cannel dissipation Cannel temperature Storage temperature Notes: 1. PW 10ms, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS VGSS ID ID (pulse) Note1 IDR PchNote2 Tch Tstg Ratings 60 16 -2.5 50 100 50 100 150 -55 to +150 Unit V V V A A A W C C
Typical Operation Characteristics
(Ta=25C)
Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop Min 3.5 -- -- -- -- -- -- -- 3.5 Typ -- -- -- -- -- 0.6 0.35 175 -- Max -- 1.2 100 50 1 -- -- -- 12 Unit V V A A A mA mA C V Test Conditions
Vi = 6 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 6 V, VDS = 0 Vi = 3.5 V, VDS = 0 Cannel temperature
REJ03G1674-0100 Page 2 of 8
Rev.1.00
May 19, 2008
HAF2027(L), HAF2027(S)
Electrical Characteristics
(Ta = 25C)
Item Drain current Symbol ID1 ID2 ID3 V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS VGS(off) |yfs| RDS(on) RDS(on) Coss td(on) tr td(off) tf VDF trr tos1 tos2 Min 80 15 -- 60 16 -2.5 -- -- -- -- -- -- -- 1.0 15 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- 0.6 0.35 -- -- 65 7.7 10.3 1423 10 48 22 23 0.9 102 0.7 0.43 Max -- -- 10 -- -- -- 100 50 1 -100 -- -- 10 2.25 -- 10 15 -- -- -- -- -- -- -- -- -- Unit A A mA V V V A A A A mA mA A V S m m pF s s s s V ns ms ms Test Conditions VGS = 6 V, VDS = 10 V Note3 VGS = 3.5 V, VDS = 10 V Note3 VGS = 1.2 V, VDS = 10 V Note3 ID = 10 mA, VGS = 0 IG = 300 A, VDS = 0 IG = -100 A, VDS = 0 VGS = 6 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = -2.4 V, VDS = 0 VGS = 6 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 25 A, VDS = 10 V Note3 ID = 25 A, VGS = 10 V Note3 ID = 25 A, VGS = 4 V Note3 VDS = 10 V, VGS = 0, f = 1MHz VGS = 10 V, ID= 25 A, RL = 1.2
Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current
Input current (shut down) Zero gate voltage drain current Gate to source cut off voltage Forward transfer admittance Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down Note4 operation time
IF = 50 A, VGS = 0 IF = 50 A, VGS = 0, diF/dt = 100 A/s VGS = 5 V, VDD = 16 V VGS = 5 V, VDD = 24 V
Notes: 3. Pulse test 4. Including the junction temperature rise of the over lorded condition.
REJ03G1674-0100 Page 3 of 8
Rev.1.00
May 21, 2008
HAF2027(L), HAF2027(S)
Main Characteristics
Power vs. Temperature Derating
200 1000 Thermal shut down operation area 150
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
100
DC O
PW
1 s m
= 10 m s
n tio ra pe
100
10
c (T = 25
50
1
Operation in this area is limited RDS(on)
Ta = 25C
C)
0
50
100
150
200
0.1 0.01
0.1
1
10
100
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
200
8V 10 V 6V
Typical Transfer Characteristics
100
Pulse Test
Drain Current ID (A)
Drain Current ID (A)
Tc = -25C 75 25C 50 75C 25 VDS = 10 V Pulse Test
150
100
5V 4V VGS = 3.5 V
50
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS(on) (mV)
1200 Pulse Test 1000 800 600 400 200 ID = 50 A 25 A 10 A 0 2 4 6 8 10 12
Static Drain to Source On State Resistance RDS(on) (m)
Drain Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source State Resistance vs. Drain Current
1000
100
VGS = 4 V 10 VGS = 10 V Pulse Test 1 0.1 1
10
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1674-0100 Page 4 of 8
Rev.1.00
May 19, 2008
HAF2027(L), HAF2027(S)
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
20 Pulse Test 25 A 15 ID = 10 A 25 A 10 VGS = 4 V ID = 10 A 1000 100 10 1 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 75C
Static Drain to Source On State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
VDS = 10 V Pulse Test Tc = -25C
25C
VGS = 10 V 5 -50 -25 0 25 50 75 100 125 150
0.1
1
10
100
Case Temperature Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
1000 di / dt = 100 A / s VGS = 0, Ta = 25C 100
Switching Characteristics
tr
Switching Time t (s)
tf td(off) 10 td(on)
100
10 1 10 100
1 0.1
VGS = 10 V, VDD = 30 V PW = 300 s, duty 1 % 1 10 100
Case Temperature IDR (A) Reverse Drain Current vs. Source to Drain Voltage
50
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage 10000
Reverse Drain Current IDR (A)
5V 40
VGS = 0 V
30
10 V
Capacitance C (pF)
1000
Coss
20
10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
VGS = 0 f = 1 MHz
100 0 10 20 30 40 50 60 Drain to Source Voltage VDS (V)
Source to Drain Voltage VSD (V)
REJ03G1674-0100 Page 5 of 8
Rev.1.00
May 19, 2008
HAF2027(L), HAF2027(S)
Gate to Source Voltage vs. Shutdown Time of Load-Short Test
Shutdown Case Temperature Tc (C) Gate to Source Voltage VGS (V)
15 200
Shutdown Case Temperature vs. Gate to Source Voltage
180
VDD = 16 V 10
160
24 V 5
140
120 100 0
ID = 5 A
0 0.00001
0.0001
0.001
0.01
2
4
6
8
10
Shutdown Time of Load-Short Test Pw (S)
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3
Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
0.1
0.05 0.02
ch- c(t) = s (t) * ch- c ch- c = 1.25C/W, Tc = 25C
PDM
D=
PW T
0.03
PW T
0.0
1
0.01 10
1s
h
p ot
uls
e
100
1m
10 m
100 m
1
10
Pulse Width PW (S) Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 30 V Vout Monitor Vin Vout Vin 10V 50 10% 10% 10%
Waveform
90%
90% td(on) tr
90% td(off) tf
REJ03G1674-0100 Page 6 of 8
Rev.1.00
May 19, 2008
HAF2027(L), HAF2027(S)
Package Dimensions
Package Name LDPAK(L) JEITA Package Code RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
0.76 0.1 2.54 0.5 2.54 0.5
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.4 0.1
Package Name LDPAK(S)-(1)
JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
REJ03G1674-0100 Page 7 of 8
Rev.1.00
May 19, 2008
1.7
1.3 0.15
7.8 6.6
HAF2027(L), HAF2027(S)
Ordering Information
Part No. HAF2027-90STL-E HAF2027-90STR-E Quantity 1000 pcs/Reel 1000 pcs/Reel Shipping Container Taping (Reel) Taping (Reel)
REJ03G1674-0100 Page 8 of 8
Rev.1.00
May 19, 2008
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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